个人简介
贾彩虹（1981-），河南兰考人。2004年毕业于澳门新莆京游戏app，获得物理学学士学位。2007年获得澳门新莆京游戏app微电子学与固体电子学硕士学位。2010年获得中国科学院半导体研究所材料物理与化学博士学位。2014-2017年在加州大学伯克利分校访问。在Applied Physics Letters，Journal of physics D: Applied Physics，Journal of Applied Physics，Nanoscale Research lett ers，Applied Surface Science等国际期刊，以第一作者或第一通讯作者发表论文30多篇，h因子高达16。
学术成果
贾彩虹博士对铁电和半导体异质结材料和器件的类脑计算研究有着丰富经验。
(1) 采用脉冲激光沉积技术在a面Al2O3单晶衬底上外延生长BaTiO3/ZnO异质结，确定了其面内和面外的外延关系。发现ZnO为单畴外延生长，而BaTiO3则三畴外延生长。在较高激光能量下生长的BaTiO3薄膜具有整流效应，而较低的激光能量下生长的BaTiO3薄膜具有双极性阻变效应。这种从整流到双极性阻变效应的转变可以通过界面态密度的变化来理解。该文章发表在Appl. Phys. Lett. 111, 113506 (2017)。
(2)采用变温和脉冲方法研究了ZnO/Nb:SrTiO3异质结的负微分电阻效应。发现随温度从140 K升高到400 K，负微分电阻峰强随着温度升高先增后减，负微分电阻峰位绝对值则先向较低偏压方向移动，后向较高偏压方向移动。在施加较小较窄的正脉冲后，不会出现负微分电阻，而随着正向脉冲幅度和宽度的增加，负微分电阻峰逐渐增强。这种负微分电阻随着温度和脉冲变化的行为可以根据电离氧空位的产生/漂移结合俘获/去俘获电子来理解。该文章发表在Appl. Phys. Lett. 115, 223503 (2019)。
(3)采用脉冲激光沉积技术在Nb:SrTiO3单晶衬底上外延生长了ZnO薄膜，发现ZnO/Nb:SrTiO3异质结在小电压作用下显示整流特性，而较大电压作用下显示双极性电致阻变和负微分电阻现象，并且双极性阻变和负微分电阻仅在施加足够大的正向电压之后才会出现。我们认为界面态充放电引起空间电荷区宽度变化对上述现象起着重要作用。另外，高(低)阻态的阻值随着负(正)向极大电压逐渐变化，意味着ZnO/Nb:SrTiO3异质结可以用作多级存储器或忆阻器。该文章发表在Appl. Phys. Lett. 104, 043501 (2014)。
科研项目
1. 国家自然科学基金，青年项目，不同取向ZnO/ 铁电外延异质结的界面和电学耦合性质（51202057），2013.01-2015.12，24万元。主持人
2. 河南省自然科学基金，铁电/半导体外延异质结的电致阻变效应及其光调控（162300410016），2017.01-2018.12，10万元。主持人
3. 河南省高等学校重点科研项目，铁电/ZnO外延异质结忆阻效应及器件性能研究（17A140004），2017.01-2018.12，5万元。主持人
4. 中国博士后基金第49批二等资助，氮化铝异质结深紫外发光器件的能带调控设计与光电性能研究（20110490994），2011年，3万元。主持人
5. 河南省教育厅项目，铜锌锡硫太阳能电池的性能优化（12A480001），2012.09-2015.06，2万元。主持人
代表论文
1.Caihong Jia*, Yong Ren, Yanfeng Yin, Weifeng Zhang*, Temperature- and pulse-dependent negative differential resistances in ZnO/Nb:SrTiO3 heterojunctions,Appl. Phys. Lett.115, 223503 (2019).
2.Caihong Jia*, Xiaoqian Yin, Guang Yang, Yonghui Wu, Jiachen Li, Yonghai Chen, Weifeng Zhang*, Epitaxial growth of BaTiO3/ZnO heterojunctions and transition from rectification to bipolar resistive switching effect,Appl. Phys. Lett.111, 113506, (2017).
3.Caihong Jia*, Xianwen Sun, Guoqiang Li, Yonghai Chen, Weifeng Zhang*, Origin of attendant behaviors of bipolar resistive switching and negative differential resistance in Nb:SrTiO3/ZnO heterojunctions,Appl. Phys. Lett.104, 043501, (2014).
4.Caihong Jia,Feng Yang, Lei Zhao, Gang Cheng, Guanghong Yang*, Temperature-dependent electrical transport properties of individual NiCo2O4 nanowire, Nano. Res. Lett. 14, 10 (2019).
5.Caihong Jia,Lei Zhao, Mengsi Cui, Feng Yang, Gang Cheng, Guanghong Yang*, Zaiping Zeng*, Surface coordination modification and electrical properties of few-layer black phosphorus exfoliated by the liquid-phase method,J. Alloy. Comp.799, 99-107 (2019).
6.Caihong Jia*,Jiachen Li, Guang Yang, Yonghai Chen, Weifeng Zhang*, Ferroelectric field effect induced asymmetric resistive switching effect in BaTiO3/Nb:SrTiO3 epitaxial heterojunctions,Nano. Res. Lett.13, 102 (2018).
7.Caihong Jia*, Yong Ren, Guang Yang, Jiachen Li, Yonghai Chen, Weifeng Zhang*, Asymmetric resistive switching effect in ZnO/Nb:SrTiO3heterojunctions,Applied Physics A124: 189 (2018).
8. Jiachen Li, Guang Yang, Yonghui Wu, Weifeng Zhang,Caihong Jia*, Asymmetric resistive switching effect in Au/Nb:SrTiO3 Schottky junctions,Physica Status Solidi A, 1700912, (2018).
9. Yong Ren, Jiachen Li, Weifeng Zhang,Caihong Jia*, Multi-level resistive switching behaviors and retention characteristics in ZnO/Nb:SrTiO3 heterojunctions,J. Phys. D: Appl. Phys.50, 405111, (2017).
10. Ming Han, Yong Ren, Jiachen Li, Yonghai Chen, Weifeng Zhang,Caihong Jia*, Enhancing rectification of Nb:SrTiO3/ZnO heterojunctions by magnetic field,Vacuum, 142, 66, (2017).
11. Yinglong Fang, Jiachen Li, Yonghai Chen, Weifeng Zhang,Caihong Jia*, Magnetic field-induced bipolar resistive switching and negative differential resistance in (110)SrTiO3:Nb/ZnO heterojunctions,Physica B, 521, 69 (2017).
12. Qiong Zhang,Caihong Jia*, Weiwan Liu, Weifeng Zhang, Effect of sweeping voltage and compliance current on bipolar resistive switching and white-light controlled Schottky behavior in epitaxial BaTiO3(111) thin films,Mater. Sci. Semi. Proc.41, 544 (2016).
13. Weiwan Liu,Caihong Jia*, Qiong Zhang, Weifeng Zhang*, Mechanism of rectification and two-type bipolar resistance switching behaviors of Pt/Pb(Zr0.52Ti0.48)O3/Nb:SrTiO3,J. Phys. D: Appl. Phys.48, 485102 (2015).
14.Caihong Jia, Shan Wang, Yonghui Wu, Yonghai Chen, Xianwen Sun, Weifeng Zhang, Epitaxial properties of ZnO thin films on LaAlO3substrates by pulsed laser deposition, J. Crystal Growth 421, 19 (2015).
15. Guang Yang,Caihong Jia*, Yonghai Chen, Xin Chen, Weifeng Zhang*, Negative differential resistance and resistance switching behaviors in BaTiO3 thin films,J. Appl. Phys.115, 204515 (2014).
16. Xin Chen, Caihong Jia*, Yonghai Chen, Guang Yang, Weifeng Zhang, Ferroelectric memristive effect in BaTiO3 epitaxial thin films,J. Phys. D: Appl. Phys.47, 365102, (2014).
17. Xiuwen Chen,Caihong Jia*, Yonghai Chen, Hongtao Wang, Weifeng Zhang*, Epitaxial growth and optical properties of Al- and N-polar AlN films by laser molecular beam epitaxy,J. Phys. D: Appl. Phys.47,125303 (2014).
18. Hongtao Wang,Caihong Jia*, Jiankai Xu, Yonghai Chen, Xiuwen Chen, Weifeng Zhang*, Epitaxial growth of nonpolar m-plane AlN film on bare and ZnO buffered m-sapphire,J. Crystal Growth391, 111, (2014).
19.Caihong Jia, Yonghai Chen*, Xianglin Liu, Shaoyan Yang, Weifeng Zhang, and Zhanguo Wang, Control of epitaxial relationships of ZnO/SrTiO3heterointerfaces by etching the substrate surface,Nanoscale Res. Lett.8, 23, (2013).
20.Caihong Jia, Qingchen Dong, and Weifeng Zhang*, Effect of incorporating copper on resistive switching properties of ZnO films,J. Alloys Comp.520, 250, (2012).
21. Jian Sun,Caihong Jia, Guoqiang Li, Weifeng Zhang*, Control of normal and abnormal bipolar resistive switching by interface junction on In/Nb:SrTiO3interfaces,Appl. Phys. Lett.101, 133506, (2012).
22. Yonghui Wu,Caihong Jia, Weifeng Zhang*, Growth of conductive and insulative highly-orientated aluminum nitride thin films using laser molecular beam epitaxy,Diamond and Related Materials,25, 139-143 (2012).
23.Caihong Jia, Yonghai Chen*, Yuchao Jiang, Fengqi Liu, Shengchun Qu, Weifeng Zhang, and Zhanguo Wang, Photoluminescence of porous InP filled with ferroelectric polymers,Appl. Phys. A.111, 695-699, (2013).
24.Caihong Jia, Yonghai Chen*, Biao Zhang, Xianglin Liu, Shaoyan Yang, Weifeng Zhang, and Zhanguo Wang, Taloring the in-plane epitaxial relationship of InN films on (111)SrTiO3substrates by substrate pretreatment,Appl. Surf. Sci.258, 2927-2930, (2012).
25.Caihong Jia, Yonghai Chen*, Biao Zhang, Xianglin Liu, Shaoyan Yang, Weifeng Zhang, and Zhanguo Wang, Wurtzite to zincblende transition of InN films on (011) SrTiO3by decreasing trimethylindium flows,Appl. Phys. A106, 655-659, (2012).
26.Caihong Jia, Yonghai Chen*, Yan Guo, Xianglin Liu, Shaoyan Yang, Weifeng Zhang, and Zhanguo Wang, Valence band offset of InN/BaTiO3heterojunction measured by X-ray photoelectron spectroscopy,Nanoscale Res. Lett.6, 316, (2011).
27.Caihong Jia, Yonghai Chen*, Xiaolong Zhou, Genhua Liu, Yu Guo, Xianglin Liu, Shaoyan Yang, and Zhanguo Wang, InN layers grown by MOCVD on SrTiO3substrates,J. Crystal Growth312, 373-377, (2010).
28.Caihong Jia, Yonghai Chen*, Xiaolong Zhou, Anli Yang, Gaolin Zheng, Xianglin Liu, Shaoyan Yang, and Zhanguo Wang, Valence band offset of ZnO/BaTiO3heterojunction measured by X-ray photoelectron spectroscopy,Appl. Phys. A99, 511-514, (2010).
29.Caihong Jia, Yonghai Chen*, Xiaolong Zhou, Anli Yang, Gaolin Zheng, Xianglin Liu, Shaoyan Yang, and Zhanguo Wang, Valence band offset of ZnO/SrTiO3heterojunction measured by X-ray photoelectron spectroscopy,J. Phys. D: Appl. Phys.42, 095305, (2009).
30.Caihong Jia, Yonghai Chen*, Genhua Liu, Xianglin Liu, Shaoyan Yang and Zhanguo Wang, Structural and optical properties of ZnO films on SrTiO3substrates by MOCVD,J. Phys. D: Appl. Phys.42, 015415, (2009).
31.Caihong Jia, Yonghai Chen, Weifeng Zhang*, Optical properties of aluminium-, gallium- and indium-doped Bi4Ti3O12films,J. Appl. Phys.105, 113108, (2009).
32.Caihong Jia, Yonghai Chen*, Genhua Liu, Xianglin Liu, Shaoyan Yang, Zhanguo Wang, Growth of c-oriented ZnO films on (001)SrTiO3substrates by MOCVD,Journal of Crystal Growth311, 200–204, (2008).
33.Caihong Jia, Yonghai Chen, Linghong Ding, Weifeng Zhang*, Effect of incorporating nonlanthanoidal indium on optical properties of ferroelectric Bi4Ti3O12thin films,Appl. Surf. Sci.253, 9506–9512, (2007).
招生信息
铁电和半导体异质结材料及器件的类脑计算研究。
